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| Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 General Description The AP2126 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. Each of AP2126 is equipped with a voltage reference, an error amplifier, a resistor network for setting output voltage, a chip enable circuit, a current limit circuit and OSTD (over temperature shut down) circuit to prevent the IC from over current and over temperature. The AP2126 has features of high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make it ideal for use in various battery-powered apparatus. AP2126 has 3.3V fixed voltage version. It is available in SOT-23-5 Package. Features * * * * * * * * * * * * Low Dropout Voltage: 170mV@300mA High Output Voltage Accuracy: 2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1A Low Quiescent Current: 60A Typical Low Output Noise: 60Vrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1F for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50s Auto Discharge Resistance: RDS(ON)=60 Applications * * * Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2126 Jun. 2008 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Pin Configuration K Package (SOT-23-5) Shutdown GND VIN 1 2 3 5 NC 4 VOUT Figure 2. Pin Configuration of AP2126 (Top View) Functional Block Diagram SHUTDOWN UVLO & Shutdown Logic VIN Thermal Shutdown Foldback Current Limit VOUT 3M NC VREF GND Figure 3. Functional Block Diagram of AP2126 Jun. 2008 Rev. 1.1 2 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Ordering Information AP2126 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 3.3: Fixed Output 3.3V Product AP2126 Package SOT-23-5 Temperature Range -40 to 85oC Part Number Green AP2126K-3.3TRG1 FEF Marking ID Green Packing Type Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jun. 2008 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Absolute Maximum Ratings (Note 1) Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TJ TSTG TLEAD RJA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 300 Unit V V mA oC oC o C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ Min -40 Max 6 85 Unit V oC Jun. 2008 Rev. 1.1 4 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Electrical Characteristics (Continued) (AP2126-3.3V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Standby Current Symbol VOUT VIN IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VDROP IQ ISTD VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VOUT=3.3V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis PSRR Ripple 1Vp-p VIN=VOUT+1V f=1KHz f=10KHz (VOUT/VOUT) /T ILIMIT ISHORT tUP VNOISE TA=25oC, 10Hz f100kHz Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 IOUT=30mA, -40oCTJ85oC VIN-VOUT=1V, VOUT=0.98*VOUT VOUT=0V 170 60 0.1 65 65 45 450 0.6 0.06 300 90 1.0 Conditions VIN=VOUT+1V 1mAIOUT300mA Min 98%* VOUT Typ Max 102%* VOUT 6 Unit V V mA %/A %/V mV A A dB dB dB ppm/oC mA mA 100 400 50 50 60 6 0.4 s Vrms V V M oC o C Jun. 2008 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics 240 3.5 220 200 T C=-40 C o 3.0 180 T C=25 C o Output Voltage (V) 2.5 Dropout Voltage (mV) 160 140 120 100 80 60 40 20 0 T C=125 C o 2.0 1.5 TC=-40 C o 1.0 TC=25 C o TC=85 C 0.5 0.0 0.1 0.2 0.3 o VIN=4.3V 0.4 0.5 50 100 150 200 250 300 Output Current (A) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Dropout Voltage vs. Output Current, VOUT=3.3V 120 115 110 105 70 TC=-40 C TC=25 C VIN=4.3V, VOUT=3.3V Quiescent Current (A) o o o 68 66 64 62 60 58 56 54 52 50 -40 IOUT=0 VIN=4.3V, VOUT=3.3V Quiescent Current (A) 100 95 90 85 80 75 70 65 60 55 50 0 TC=85 C 50 100 150 200 250 300 -20 0 20 40 60 o 80 100 120 Output Current (mA) Case Temperature ( C) Figure 6. Quiescent Current vs. Output Current Figure 7. Quiescent Current vs. Case Temperature Jun. 2008 Rev. 1.1 6 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 80 70 60 3.295 3.294 3.293 IOUT=10mA CIN=COUT=1F, VIN=4.3V Quiescent Current (A) 3.292 Output Voltage (V) 6 50 40 30 20 10 0 3.291 3.290 3.289 3.288 3.287 3.286 3.285 TC=-40 C TC=25 C TC=85 C IOUT=0 0 1 2 3 4 5 o o o 3.284 -40 -20 0 20 40 60 o 80 100 120 Input Voltage (V) Case Temperature ( C) Figure 8. Quiescent Current vs. Input Voltage Figure 9. Output Voltage vs. Case Temperature 44 42 40 38 36 CIN=COUT=1F, VIN=4.3V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Short Current (mA) 34 32 30 28 26 24 22 20 18 16 -40 -20 0 20 40 60 o Output Voltage (V) IOUT=0 IOUT=300mA TC=25 C 0 1 2 3 4 5 6 o 80 100 120 Case Temperature ( C) Input Voltage (V) Figure 10. Short Current vs. Case Temperature Figure 11. Output Voltage vs. Input Voltage Jun. 2008 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 2.0 1.8 1.6 VOUT=3.3V No heatsink Power Dissipation (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IOUT VOUT -20 0 20 40 60 o 80 100 120 Case Temperature( C) Figure 13. Load Transient Figure 12. Power Dissipation vs. Case Temperature (Conditions: CIN=COUT=1F, VIN=4.4V, VOUT=3.3V) VIN VOUT VOUT VShutdown Figure 14. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=4 to 5V, VOUT=3.3V) Figure 15. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=3.3V) Jun. 2008 Rev. 1.1 8 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 100 90 80 70 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=3.3V PSRR (dB) 60 50 40 30 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 16. PSRR vs. Frequency Jun. 2008 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Application VIN VIN VOUT VOUT AP2126 Shutdown CIN 1F COUT 1F GND VOUT=3.3V Figure 17. Typical Application of AP2126 Jun. 2008 Rev. 1.1 10 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0 8 1.050(0.041) 1.250(0.049) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Jun. 2008 Rev. 1. 1 11 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 |
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